1.Suitable for distributed projects，Advanced module technology delivers superiormodule efficiency，（M10 Gallium-doped Wafer ·Integrated Segmented Ribbons ·9-busbar Half-cut Cell），Excellent outdoor power generation performance，High module quality ensures long-term reliability 2.High Reliability S"We use intelligent crack-free welding technology to improve module power and efficiency, while enhancing the module's load-bearing capacity. The module operating current is about 13A, which is perfectly suitable for mainstream string inverters. In addition, gallium-doped technology overcomes the problem of module light attenuation , ensuring the stability of long-life component power generation. The power generation on the back of the stacked module has a higher comprehensive power generation capacity, and the power generation gain has been verified by customers and third parties. We are committed to providing efficient and reliable products to provide end customers with long-term stable power generation income. " 3.Ultra-low LID 2% degradation in the first year, 0.4% annual degradation in the 2nd-30th year.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.

Product number	LR5-72HPH-540M	LR5-72HPH-545M	LR5-72HPH-550M	LR5-72HPH-555M	LR5-72HPH-560M
quality assurance	12-year Warranty forMaterials and Processing
product quality assurance	30-year Warranty for ExtraLinear Power Output
Power Output Guaranteed	2% degradation in the first year, 0.4% annual degradation in the 2nd-30th
Electrical performance parameters (STC)
Peak Power (Pmax)	540 Wp	545 Wp	550 Wp	555 Wp	560 Wp
Peak operating voltage (Vmpp)	41.65 V	41.8 V	41.95 V	42.1 V	42.25 V
Peak operating current (Impp)	12.79 A	13.04 A	13.12 A	13.19 A	13.26 A
Open circuit voltage (Voc)	49.5 V	49.65 V	49.8 V	49.95 V	50.1 V
Short circuit current (Isc)	13.85 A	13.92 A	13.98 A	14.04 A	14.1 A
Component efficiency	20.90%	21.10%	21.30%	21.50%	21.70%
Power deviation (positive)	3%	3%	3%	3%	3%
Electrical performance parameters (NOCT)
Peak Power (Pmax)	403.6 Wp	407.4 Wp	411.1 Wp	414.8 Wp	418.6 Wp
Peak operating voltage (Vmpp)	38.69 V	38.83 V	38.97 V	39.11 V	39.25 V
Peak operating current (Impp)	10.43 A	10.49 A	10.56 A	10.61 A	10.67 A
Open circuit voltage (Voc)	46.54 V	46.68 V	46.82 V	46.97 V	47.11 V
Short circuit current (Isc)	11.2 A	11.25 A	11.31 A	11.35 A	11.4 A
maximum durable temperature	45±2 °C
temperature characteristics
Operating temperature	-40~85 °C
Temperature coefficient (Pmax)	-0.34 %/°C
Temperature Coefficient (Voc)	-0.265 %/°C
Temperature Coefficient (Isc)	0.05 %/°C
System Integration Parameters
system voltage	1500 V
Fuse rated current	25 A
physical parameters
Component size (height/width/thickness)	2278x1134x35 mm
weight	27.5 kg
Cell type	Monocrystalline silicon
Cell specification	182x182 mm
Cell Quantity	144
glass type	Tempering
glass thickness	3.2 mm
border type	Anodized aluminum alloy
Number of Bypass Diodes	3
Junction box protection class	IP 68
Cable cross section	4 mm²