1.210+N product technology, n-type i-TOPCon technology，With n-type silicon wafers as the substrate, the minority carrier lifetime is higher than that of p-type silicon wafers, n-type silicon wafers are used as the substrate, there is no boron-oxygen compound pair, combined with advanced cell preparation technology, the light-induced attenuation is significantly lower than that of p-type cells, PACO The back side adopts passivation contact structure, and its carrier transport is based on quantum tunneling effect, and the temperature performance of the battery is better. 2.Maximum Power up to 670W+ Module max output power up to 670W+ 3.High Reliability Excellent resistance to hidden cracks and anti-PID performance, power warranty period of up to 30 years, more excellent double-sided power generation performance, double-sided rate of 80 ± 5%, single-watt power generation increased by 3% compared with PERC, and lower LCOE , fully meet the different needs of distributed and large-scale ground power station customers, flexibly adapt to the tracking bracket, greatly improve the utilization rate of the tracking bracket and effectively reduce B0S cost 4.Choosing TALLMAX modules is a reliable and wise investment. Trina Solar's TALLMAX modules enable commercial and utility-scale solar projects to achieve significant system savings. As a vertically integrated company, Trina Solar controls the quality of PV systems throughout the supply chain, reducing risk and increasing return on investment. Trina Solar is the first PV company to receive certification from UL’s Customer Test Data Program, allowing us to test and publish UL recognized quality standards.

Product number	650	655	660	665	670
quality assurance	12 year Product Workmanship Warranty
product quality assurance	30 year Power Warranty
Power Output Guaranteed	1% rst year degradation,0.40% Annual Power Attenuation
Electrical performance parameters (STC)
Peak Power (Pmax)	650 Wp	655 Wp	660 Wp	665 Wp	670 Wp
Peak operating voltage (Vmpp)	37.4 V	37.6 V	37.8 V	38 V	38.2 V
Peak operating current (Impp)	17.39 A	17.43 A	17.47 A	17.51 A	17.55 A
Open circuit voltage (Voc)	45.3 V	45.5 V	45.7 V	45.9 V	46.1 V
Short circuit current (Isc)	18.44 A	18.48 A	18.53 A	18.57 A	18.62 A
Component efficiency	20.90%	21.10%	21.20%	21.40%	21.60%
Power deviation (positive)	0.50%	0.50%	0.50%	0.50%	0.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax)	492 Wp	496 Wp	500 Wp	504 Wp	508 Wp
Peak operating voltage (Vmpp)	34.9 V	35.1 V	35.3 V	35.4 V	35.6 V
Peak operating current (Impp)	14.09 A	14.13 A	14.17 A	14.22 A	14.26 A
Open circuit voltage (Voc)	42.7 V	42.9 V	43 V	43.2 V	43.4 V
Short circuit current (Isc)	14.86 A	14.89 A	14.93 A	14.96 A	15.01 A
maximum durable temperature	43±2 °C
temperature characteristics
Operating temperature	-40~85 °C
Temperature coefficient (Pmax)	-0.34 %/°C
Temperature Coefficient (Voc)	-0.25 %/°C
Temperature Coefficient (Isc)	0.04 %/°C
System Integration Parameters
system voltage	1500 V
Fuse rated current	30 A
physical parameters
Component size (height/width/thickness)	2384x1303x33 mm
weight	33.3 kg
Cell type	Monocrystalline silicon
Cell Quantity	132
glass type	Anti-reflective coating
glass thickness	3.2 mm
Type of sealing material	EVA
border type	Anodized aluminum alloy
Junction box protection class	IP 68
connector type	MC4
Cable cross section	4 mm²